Monocrystalline silicon wafer
Optical silicon is typically lightly doped (5 to 40 ohm cm) to achieve optimal transmission above 10 microns, with boron (P-type) and phosphorus (N-type) doping. The doped silicon has a further passband of 30 to 100 microns, which is only effective in very high resistivity uncompensated materials. CZ silicon is commonly used as a substrate material for infrared reflectors and windows in the 1.5-8 micron region. The strong 9 μ m Absorption band makes it not suitable for CO2 laser transmission applications, but because of its high thermal conductivity and low density, it is often used for laser mirrors. Between 1.5 and 8 μ The m area is used as a window and lens; Mirrors for CO2 laser and spectrometer applications.